Effect of NO annealing on charge traps in oxide insulator and transition layer for 4H-SiC metal–oxide–semiconductor devices
The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias stress（TDBS）,capacitance–voltage（C–V）,and secondary ion mass spectroscopy（SIMS）.It is revea...
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| Published in | Chinese physics B Vol. 25; no. 9; pp. 484 - 488 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.09.2016
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| Subjects | |
| Online Access | Get full text |
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| Summary: | The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias stress（TDBS）,capacitance–voltage（C–V）,and secondary ion mass spectroscopy（SIMS）.It is revealed that two main categories of charge traps,near interface oxide traps（Nniot） and oxide traps（Not）,have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot. |
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| Bibliography: | Yifan Jia, Hongliang Lv, Yingxi Niu,et al（ 1 School of Microelectronics, Xidian University, Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, Xi＇an 710071, China 2 Global Energy Interconnection Research Institute, Beijing 102209, China 3 School of Advanced Materials and Nanotechnology, Xidian University, Xi＇an 710071, China 4 Zhuzhou CRR C Times Electric Company Limited, Zhuzhou 412001, China 5 Zhongxing Telecommunication Equipment Corporation, Shenzhen 518057, China） 4H–SiC metal–oxide–semiconductor devices NO annealing near interface oxide traps oxide traps 11-5639/O4 The effect of nitric oxide（NO） annealing on charge traps in the oxide insulator and transition layer in n-type4H–Si C metal–oxide–semiconductor（MOS） devices has been investigated using the time-dependent bias stress（TDBS）,capacitance–voltage（C–V）,and secondary ion mass spectroscopy（SIMS）.It is revealed that two main categories of charge traps,near interface oxide traps（Nniot） and oxide traps（Not）,have different responses to the TDBS and C–V characteristics in NO-annealed and Ar-annealed samples.The Nniotare mainly responsible for the hysteresis occurring in the bidirectional C–V characteristics,which are very close to the semiconductor interface and can readily exchange charges with the inner semiconductor.However,Not is mainly responsible for the TDBS induced C–V shifts.Electrons tunneling into the Not are hardly released quickly when suffering TDBS,resulting in the problem of the threshold voltage stability.Compared with the Ar-annealed sample,Nniotcan be significantly suppressed by the NO annealing,but there is little improvement of Not.SIMS results demonstrate that the Nniotare distributed within the transition layer,which correlated with the existence of the excess silicon.During the NO annealing process,the excess Si atoms incorporate into nitrogen in the transition layer,allowing better relaxation of the interface strain and effectively reducing the width of the transition layer and the density of Nniot. |
| ISSN: | 1674-1056 2058-3834 |
| DOI: | 10.1088/1674-1056/25/9/097101 |