Dynamic control of the terahertz rainbow trapping effect based on a silicon-filled graded grating

We theoretically propose a scheme to realize the dynamic control of the properties of the terahertz（THz） rainbow trapping effect（RTE） based on a silicon-filled graded grating（SFGG） in a relatively broad band via optical pumping.Through the theoretical analysis and finite-element method simulations,...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 26; no. 1; pp. 417 - 421
Main Author 王书林 丁岚 徐文
Format Journal Article
LanguageEnglish
Published 2017
Subjects
光栅
动态控制
填充
太赫兹
彩虹
捕获效应
有限元方法
硅
Online AccessGet full text

Cover

More Information
Summary:We theoretically propose a scheme to realize the dynamic control of the properties of the terahertz（THz） rainbow trapping effect（RTE） based on a silicon-filled graded grating（SFGG） in a relatively broad band via optical pumping.Through the theoretical analysis and finite-element method simulations, it is conceptually demonstrated that the band of the RTE can be dynamically tuned in a range of -0.06 THz. Furthermore, the SFGG can also be optically switched between a device for the RTE and a waveguide for releasing the trapped waves. The results obtained here may imply applications for the tunable THz plasmonic devices, such as on-chip optical buffers, broad band slow-light systems, and integrated optical filters.
Bibliography:metamaterials; subwavelength structures; slow light; terahertz
We theoretically propose a scheme to realize the dynamic control of the properties of the terahertz（THz） rainbow trapping effect（RTE） based on a silicon-filled graded grating（SFGG） in a relatively broad band via optical pumping.Through the theoretical analysis and finite-element method simulations, it is conceptually demonstrated that the band of the RTE can be dynamically tuned in a range of -0.06 THz. Furthermore, the SFGG can also be optically switched between a device for the RTE and a waveguide for releasing the trapped waves. The results obtained here may imply applications for the tunable THz plasmonic devices, such as on-chip optical buffers, broad band slow-light systems, and integrated optical filters.
Shu-Lin Wang1,Lan Ding1,Wen Xu1,2（1. School of Physics and Astronomy, Yunnan University, Kunming 650091, China; 2. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China）
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/1/017301