Thermal stability of Al/barrier/TiSix multilayer structures

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Bibliographic Details
Published inThin solid films Vol. 320; no. 1; pp. 20 - 25
Main Authors LU, J. P, HSU, W. Y, HONG, Q. Z, DIXIT, G. A, LUTTMER, J. D, HAVEMANN, R. H, CHEN, P. J, TSAI, H. L, MAGEL, L. K
Format Conference Proceeding Journal Article
LanguageEnglish
Published Lausanne Elsevier Science 04.05.1998
Subjects
Applied sciences
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Electrical properties of specific thin films
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Metals. Metallurgy
Other inorganic semiconductors
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Inorganic compounds
Aluminium base alloys
Transition element compounds
Interdiffusion
Experimental study
Fabrication property relation
MOCVD
Thermal stability
Titanium nitrides
Thin films
Multilayers
Titanium silicides
Diffusion barriers
Copper alloys
Reactive sputtering
Diffusion
Film resistor
Transition element alloys
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ISSN:0040-6090
1879-2731
DOI:10.1016/S0040-6090(97)01060-2