Growth of relaxed GeSn film with high Sn content via Sn component-grade buffer layer structure

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Bibliographic Details
Published inJournal of physics. D, Applied physics Vol. 54; no. 43; pp. 435101 - 435106
Main Authors Liu, Xiangquan, Zheng, Jun, Li, Mingming, Wan, Fengshuo, Niu, Chaoqun, Liu, Zhi, Zuo, Yuhua, Xue, Chunlai, Cheng, Buwen
Format Journal Article
LanguageEnglish
Published IOP Publishing 28.10.2021
Subjects
GeSn alloy
magnetron sputtering
Si photonics
strain regulation
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Bibliography:JPhysD-128073.R1
ISSN:0022-3727
1361-6463
DOI:10.1088/1361-6463/ac17b4