Growth and properties of GaAs nanowires on fused quartz substrate

The growth of GaAs nanowires directly on fused quartz substrates using molecular beam epitaxy via a vapor-liquid-solid mechanism with gold as catalyst is reported. Unlike conventional Au-catalyst MBE growth of nanowires （NWs） on GaAs substrates, zinc blende is found to be the dominant crystal struct...

Full description

Saved in:
Bibliographic Details
Published inJournal of semiconductors Vol. 35; no. 9; pp. 21 - 26
Main Author 赵玉峰 李新化 王文博 周步康 段花花 史同飞 曾雪松 李宁 王玉琦
Format Journal Article
LanguageEnglish
Published 01.09.2014
Subjects
Au催化剂
GaAs衬底
MBE生长
熔融
特性
石英衬底
纳米线
透射电子显微镜
Online AccessGet full text

Cover

More Information
Summary:The growth of GaAs nanowires directly on fused quartz substrates using molecular beam epitaxy via a vapor-liquid-solid mechanism with gold as catalyst is reported. Unlike conventional Au-catalyst MBE growth of nanowires （NWs） on GaAs substrates, zinc blende is found to be the dominant crystal structure for NWs grown on fused-quartz substrates by MBE. Further transmission electron microscopy measurements show that the prepared ZB NWs have the growth direction of [112] and lamellar { 111 } twins extend through the length of NWs. Although there are longitudinal planar defects that extend through NWs, the narrow full width at half maximum of PL implies high crystal quality of NWs grown on fused-quartz substrates.
Bibliography:Zhao Yufeng, Li Xinhua, Wang Wenbo, Zhou Bukang, Duan Huahua, Shi Tongfei, Zeng Xuesong, Li Ning, and Wang Yuqi（Key Laboratory of Material Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China）
The growth of GaAs nanowires directly on fused quartz substrates using molecular beam epitaxy via a vapor-liquid-solid mechanism with gold as catalyst is reported. Unlike conventional Au-catalyst MBE growth of nanowires （NWs） on GaAs substrates, zinc blende is found to be the dominant crystal structure for NWs grown on fused-quartz substrates by MBE. Further transmission electron microscopy measurements show that the prepared ZB NWs have the growth direction of [112] and lamellar { 111 } twins extend through the length of NWs. Although there are longitudinal planar defects that extend through NWs, the narrow full width at half maximum of PL implies high crystal quality of NWs grown on fused-quartz substrates.
GaAs nanowires; molecular beam epitaxy; fused quartz; zinc blende structure; photoluminescence
11-5781/TN
ISSN:1674-4926
DOI:10.1088/1674-4926/35/9/093002