Fabrication and characterization of electric field tunable Bi1.5MgNb1.5O7 transparent capacitors

Two hundred and twenty nanometer-thick Bi1.5MgNb1.5O7 (BMN) thin films were grown on Sn-doped In2O3 (ITO)/glass substrates at 500 degree C by rf magnetron sputtering. The crystallinity, microstructure, optical and electrical properties of BMN thin films with various post-annealing conditions were in...

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Published inMaterials letters Vol. 116; pp. 50 - 52
Main Authors Yu, Shihui, Li, Lingxia, Dong, Heilei, Xu, Dan, Jin, Yuxin
Format Journal Article
LanguageEnglish
Published 01.02.2014
Subjects
Dielectric constant
Electric fields
Electrical properties
Indium oxides
Magnetron sputtering
Nanostructure
Scanning electron microscopy
Thin films
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Summary:Two hundred and twenty nanometer-thick Bi1.5MgNb1.5O7 (BMN) thin films were grown on Sn-doped In2O3 (ITO)/glass substrates at 500 degree C by rf magnetron sputtering. The crystallinity, microstructure, optical and electrical properties of BMN thin films with various post-annealing conditions were investigated. X-ray diffraction patterns and scanning electron microscope analysis reveal that the BMN thin films post-annealed in oxygen ambient had the best crystalline quality, and showed the best electrical properties, with a dielectric constant of 99 at 1MHz, dielectric tunability of 29% at 1.8MV/cm, and an average optical transmittance of about 85% in the visible range (400-800nm).
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ISSN:0167-577X
DOI:10.1016/j.matlet.2013.10.071