2-μm single longitudinal mode GaSb-based laterally coupled distributed feedback laser with regrowth-free shallow-etched gratings by interference lithography

We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coup...

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Published inChinese physics B Vol. 25; no. 2; pp. 181 - 185
Main Author 杨成奥 张宇 廖永平 邢军亮 魏思航 张立春 徐应强 倪海桥 牛智川
Format Journal Article
LanguageEnglish
Published 01.02.2016
Subjects
DFB激光器
GaSb
侧向耦合
光栅操作
分布反馈
单纵模
干涉光刻
生长过程
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/25/2/024204

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Summary:We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.
Bibliography:We report a type-I Ga Sb-based laterally coupled distributed-feedback（LC-DFB） laser with shallow-etched gratings operating a continuous wave at room temperature without re-growth process. Second-order Bragg gratings are fabricated alongside the ridge waveguide by interference lithography. Index-coupled LC-DFB laser with a cavity of 1500 μm achieves single longitudinal mode continuous-wave operation at 20℃ with side mode suppression ratio（SMSR） as high as 24 dB.The maximum single mode continuous-wave output power is about 10 mW at room temperature（uncoated facet）. A low threshold current density of 230 A/cm~2 is achieved with differential quantum efficiency estimated to be 93 mW/A. The laser shows a good wavelength stability against drive current and working temperature.
laterally coupled distributed feedback laser, LC-DFB, interference lithography, GaSb, second-order Bragg grating
Cheng-Ao Yang Yu Zhang, Yong-Ping Liao, Jun-Liang Xing, Si-Hang Wei, Li-Chun Zhang, Ying-Qiang Xu2, Hai-Qiao Ni, and Zhi-Chuan Niull 1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2 Synergetic Innovation Center of Quantum Information and Quantum Physics, University of Science and Technology of China, Hefei 230026, China
11-5639/O4
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/25/2/024204