Optimization of 1.3-μm InGaAsP/InP Electro-Absorption Modulator

We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well （MQW） electro-absorption modulators （EAMs）. In this work, the quantum confined Stark effect of the EAM is system- atically analyzed through the finite element method. An optimized structure of the 1.3-μm In...

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Bibliographic Details
Published inChinese physics letters Vol. 32; no. 8; pp. 83 - 86
Main Authors Wang, Hui-Tao, Zhou, Dai-Bing, Zhang, Rui-Kang, Lu, Dan, Zhao, Ling-Juan, Zhu, Hong-Liang, Wang, Wei, Ji, Chen
Format Journal Article
LanguageEnglish
Published 01.08.2015
Subjects
3dB带宽
EAM系统
InGaAsP/InP
优化
多量子阱
斯塔克效应
有限元方法
电吸收调制器
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/32/8/084203

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Summary:We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well （MQW） electro-absorption modulators （EAMs）. In this work, the quantum confined Stark effect of the EAM is system- atically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f-3dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.
Bibliography:WANG Hui-Tao, ZHOU Dai-Bing, ZHANG Rui-Kang, LU Dan, ZHAO Ling-Juan, ZHU Hong-Liang, WANG Wei, JI Chen（ Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083）
11-1959/O4
We report the simulation and experimental results of 1.3-μm InGaAsP/InP multiple quantum well （MQW） electro-absorption modulators （EAMs）. In this work, the quantum confined Stark effect of the EAM is system- atically analyzed through the finite element method. An optimized structure of the 1.3-μm InGaAsP/InP QW EAM is proposed for applications in 100 G ethernet. Then 1.3-μm InGaAsP/InP EAMs with f-3dB bandwidth of over 20 GHz and extinction ratio over 20 dB at 3 V bias voltage are demonstrated.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/32/8/084203