Raman scattering from GaSe1−xTex

The long-wavelength optical phonons of the layer GaSe1-xTex have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1.06 mu m line of the continuously operated YAG:Nd3+ laser. Detailed study of the Raman s...

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Published inSolid state communications Vol. 34; no. 2; pp. 125 - 128
Main Authors Abdullaev, G.B., Allakhverdiev, K.R., Babaev, S.S., Salaev, E.Yu, Tagyev, M.M., Vodopyanov, L.K., Golubev, L.V.
Format Journal Article
LanguageEnglish
Published 01.04.1980
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Summary:The long-wavelength optical phonons of the layer GaSe1-xTex have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1.06 mu m line of the continuously operated YAG:Nd3+ laser. Detailed study of the Raman spectra of GaSe1-xTex solid solutions showed that there is an abrupt change in the frequency-composition dependences for all observed modes. It is shown, that a phase transition from hexagonal epsilon -GaSe to monoclinic GaTe in GaSe1-xTex solid solutions takes place in the composition range 0.27 < = x < = 0.72. Only one mode behaviour of the optical phonons was observed in GaSe1-xTex system. 12 ref.--AA
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content type line 23
ISSN:0038-1098
DOI:10.1016/0038-1098(80)91248-X