Raman scattering from GaSe1−xTex
The long-wavelength optical phonons of the layer GaSe1-xTex have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1.06 mu m line of the continuously operated YAG:Nd3+ laser. Detailed study of the Raman s...
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Published in | Solid state communications Vol. 34; no. 2; pp. 125 - 128 |
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Main Authors | , , , , , , |
Format | Journal Article |
Language | English |
Published |
01.04.1980
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Online Access | Get full text |
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Summary: | The long-wavelength optical phonons of the layer GaSe1-xTex have been investigated at room temperature by means of Raman scattering spectroscopy. The spectra of the Bridgman grown crystals were excited with the 1.06 mu m line of the continuously operated YAG:Nd3+ laser. Detailed study of the Raman spectra of GaSe1-xTex solid solutions showed that there is an abrupt change in the frequency-composition dependences for all observed modes. It is shown, that a phase transition from hexagonal epsilon -GaSe to monoclinic GaTe in GaSe1-xTex solid solutions takes place in the composition range 0.27 < = x < = 0.72. Only one mode behaviour of the optical phonons was observed in GaSe1-xTex system. 12 ref.--AA |
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Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
ISSN: | 0038-1098 |
DOI: | 10.1016/0038-1098(80)91248-X |