High-performance enhancement-mode AlGaN/GaN MOS-HEMTs with fluorinated stack gate dielectrics and thin barrier layer

We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine i...

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Bibliographic Details
Published inJournal of semiconductors Vol. 37; no. 6; pp. 112 - 115
Main Author 高涛 徐锐敏 张凯 孔月婵 周建军 孔岑 郁鑫鑫 董迅 陈堂胜
Format Journal Article
LanguageEnglish
Published 01.06.2016
Subjects
AlGaN/GaN
HEMT
MOS器件
增强型
性能
栅介质
氟化
阻挡层
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ISSN1674-4926
DOI10.1088/1674-4926/37/6/064013

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Summary:We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer.Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm.The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.
Bibliography:11-5781/TN
We present high-performance enhancement-mode AlGaN/GaN metal-oxide-semiconductor highelectron mobility transistors（MOS-HEMTs） by a fluorinated gate dielectric technique.A nanolaminate of an Al_2O_3/La_xAl_（1-x）O_3/Al_2O_3 stack（x≈0.33） grown by atomic layer deposition is employed to avoid fluorine ions implantation into the scaled barrier layer.Fabricated enhancement-mode MOS-HEMTs exhibit an excellent performance as compared to those with the conventional dielectric-last technique,delivering a large maximum drain current of 916 mA/mm and simultaneously a high peak transconductance of 342 mS/mm.The balanced DC characteristics indicate that advanced gate stack dielectrics combined with buffered fluorine ions implantation have a great potential for high speed GaN E/D-mode integrated circuit applications.
AlGaN/GaN enhancement-mode（E-mode） stack gate dielectrics atomic layer deposition（ALD）
ISSN:1674-4926
DOI:10.1088/1674-4926/37/6/064013