High-Temperature Operation of 1.26-$\mu$m Ridge Waveguide Laser With InGaAs Metamorphic Buffer on GaAs Substrate

In this paper, we have newly developed an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapor-phase epitaxy, and realized a fully relaxed quasi-InGaAs substrate with low threading dislocation density. We have also successfully developed a 1.3-mu m-range ridge waveguide laser w...

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Bibliographic Details
Published inIEEE journal of selected topics in quantum electronics Vol. 15; no. 3; pp. 724 - 730
Main Authors Arai, Masakazu, Nakashima, Kiichi, Fujisawa, Takeshi, Tadokoro, Takashi, Kobayashi, Wataru, Yuda, Masahiro, Kondo, Yasuhiro
Format Journal Article
LanguageEnglish
Published 01.05.2009
Subjects
Buffers
Cladding
Density
Gallium arsenide
Indium gallium arsenides
Lasers
Metamorphic
Ridges
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Summary:In this paper, we have newly developed an InGaAs metamorphic buffer on a GaAs substrate grown by metal-organic vapor-phase epitaxy, and realized a fully relaxed quasi-InGaAs substrate with low threading dislocation density. We have also successfully developed a 1.3-mu m-range ridge waveguide laser with InGaP upper cladding and InAlGaAs lower cladding layers. This laser has achieved the highest continuous-wave operating temperature (173degC) reported for a metamorphic laser. We measured the relaxation oscillation frequency from the relative intensity noise and undertook a 10-Gb/s direct modulation experiment.
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ISSN:1077-260X
DOI:10.1109/JSTQE.2008.2011564