Resonant precession of magnetization and precession—induced DC voltages in FeGaB thin films

• Published in: Journal of physics. D, Applied physics Vol. 55; no. 7; pp. 75303 - 75311
• Main Authors: Bajracharya, Prabesh, Sharma, Vinay, Johnson, Anthony, Budhani, Ramesh C
• Format: Journal Article
• Language: English
• Published: IOP Publishing 17.02.2022
• Subjects: ferromagnetic resonance; Gilbert damping; inverse spin Hall effect; magnetic dead layer; spin rectification; spin–orbit coupling
• ISSN: 0022-3727; 1361-6463
• DOI: 10.1088/1361-6463/ac34ab

Abstract Measurements of frequency dependent ferromagnetic resonance and spin pumping driven dc voltage ( V dc ) are reported for amorphous films of Fe 78 Ga 13 B 9 alloy to address the phenomenon of self-induced inverse spin Hall effect (ISHE) in plain films of metallic ferromagnets (FMs). The V dc signal, which is anti-symmetric on field reversal, comprises of symmetric and asymmetric Lorentzians centered around the resonance field. Dominant role of thin film size effects is seen in setting the magnitude of static magnetization, V dc and dynamics of magnetization precession in thinner films (⩽8 nm). The film thickness dependence of magnetization parameters indicates the presence of a magnetically disordered region at the film—substrate interface, which may promote preferential flow of spins generated by the precessing magnetization towards the substrate. However, the V dc signal also draws contributions from rectification effects of a ≈0.4% anisotropic magnetoresistance and a large (≈54 nΩ m) anomalous Hall resistivity (AHR) of these films which ride over the effect of spin–orbit coupling driven spin-to-charge conversion near the film—substrate interface. We have addressed these data in the framework of the existing theories of electrodynamics of a ferromagnetic film subjected to radio-frequency field in a coplanar waveguide geometry. Our estimation of the self-induced ISHE for the sample with 54 nΩ m AHR shows that it may contribute significantly (≈90%) to the measured symmetric voltage. This study is expected to be very useful for fully understanding the spin pumping induced dc voltages in metallic FMs with disordered interfaces and large anomalous Hall effect.