GaAs film deposited on SrTiO3 substrate by molecular beam epitaxy

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Bibliographic Details
Published inJournal of crystal growth Vol. 208; no. 1-4; pp. 117 - 122
Main Authors ZHAO, Q. X, ZSEBÖK, O, SÖDERVALL, U, KARLSTEEN, M, WILLANDER, M, LIU, X. Q, CHEN, Y. D, LU, W, SHEN, S. C
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 2000
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Iii-v semiconductors
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Photoluminescence
Physics
Gallium arsenides
Inorganic compounds
Epitaxial layers
Semiconductor materials
Photoluminescence
Surfaces
Binary compounds
Crystal growth from vapors
Experimental study
Molecular beam epitaxy
Heteroepitaxy
SEM
SIMS
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ISSN:0022-0248
1873-5002
DOI:10.1016/S0022-0248(99)00428-5