The effect of temperature on the electrical characteristics of zigzag and armchair black phosphorus based 2D MOSFET

• Published in: Semiconductor science and technology Vol. 39; no. 10; pp. 105008 - 105016
• Main Authors: Majumder, Tanmoy, Mukherjee, Chandrima, Dasgupta, Sudeb, Chakraborty, Udayan, Das, Narottam, Bhattacharjee, Abhishek
• Format: Journal Article
• Language: English
• Published: IOP Publishing 01.10.2024
• Subjects: 2D-MOSFET; black phosphorus; DIBL; subthreshold swing; temperature
• ISSN: 0268-1242; 1361-6641
• DOI: 10.1088/1361-6641/ad7639

A first time comparative study of the thermal dependence of vital electrical characteristics of two-dimensional metal-oxide-semiconductor field-effect transistors based on black phosphorus for both zigzag and armchair orientations is presented in this paper. It is seen that a higher in-plane thermal conductivity in zigzag direction results in a much better on state current performance which comes at the cost of orders of magnitude increase in gate leakage and a reduced on to off state current ratio. The effect of temperature on threshold voltage ( V TH ), short channel effects like drain induced barrier lowering, subthreshold swing (SS), Schottky barrier height Φ SB and transconductance behavior in both zigzag and armchair orientations is thoroughly discussed and the inherent physical mechanisms resulting the variations are also presented. Though increase in temperature is found to deteriorate the SS and drain conductance but at the same time, it is found to improve the short channel performance of the devices under consideration.