Molybdenum Carbide: A Stable Topological Semimetal with Line Nodes and Triply Degenerate Points
We propose that the hexagonal crystal form of MoC is a stable and new type of topological semimetal. It hosts an exotic Fermi surface consisting of two concentric nodal rings in the presence of spin-orbit coupling, and possesses four pairs of triply degenerate points (TDPs) in the vicinity of the Fe...
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Published in | Chinese physics letters Vol. 34; no. 2; pp. 83 - 87 |
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Main Author | |
Format | Journal Article |
Language | English |
Published |
01.02.2017
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Online Access | Get full text |
ISSN | 0256-307X 1741-3540 |
DOI | 10.1088/0256-307X/34/2/027102 |
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Summary: | We propose that the hexagonal crystal form of MoC is a stable and new type of topological semimetal. It hosts an exotic Fermi surface consisting of two concentric nodal rings in the presence of spin-orbit coupling, and possesses four pairs of triply degenerate points (TDPs) in the vicinity of the Fermi energy. The coexistence of the nodal ring Fermi surface and TDPs in MoC leads to extraordinary properties such as distinguishable drumhead surface states and manipulatable new fermions, which make MoC a fertile platform for in-depth understanding of topological phenomena and a potential candidate material for topological electronic devices. |
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Bibliography: | Jian-Peng Sun, Dong Zhang, Kai Chang( SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083) 11-1959/O4 We propose that the hexagonal crystal form of MoC is a stable and new type of topological semimetal. It hosts an exotic Fermi surface consisting of two concentric nodal rings in the presence of spin-orbit coupling, and possesses four pairs of triply degenerate points (TDPs) in the vicinity of the Fermi energy. The coexistence of the nodal ring Fermi surface and TDPs in MoC leads to extraordinary properties such as distinguishable drumhead surface states and manipulatable new fermions, which make MoC a fertile platform for in-depth understanding of topological phenomena and a potential candidate material for topological electronic devices. |
ISSN: | 0256-307X 1741-3540 |
DOI: | 10.1088/0256-307X/34/2/027102 |