A theoretical and experimental evaluation of Ⅲ-nitride solar-blind UV photocathode

We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemic...

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Published inChinese physics B Vol. 26; no. 8; pp. 557 - 560
Main Author 任彬 郭晖 石峰 程宏昌 刘晖 刘健 申志辉 史衍丽 刘培
Format Journal Article
LanguageEnglish
Published 01.08.2017
Subjects
低压金属有机化学气相沉积
光电阴极
光谱辐射
实验
日盲
氮化物
紫外
评价
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ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/8/088504

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Summary:We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition （MOCVD）, a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN： Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.
Bibliography:We have developed a superior solar-blind ultraviolet （UV） photocathode with an AlxGa1_xrN photocathode （x ～ 0.45） in semi-transparent mode, and assessed spectra radiant sensitivity related to practical use. Betbre being grown over a basal plane sapphire substrate by low-pressure metal organic chemical vapor deposition （MOCVD）, a reasonable design was made to the photocathode epitaxy structure, focusing on the AlxGa1_xN： Mg active layer, then followed by a comprehen- sive analysis of the structural and optical characterization. The spectra radiant sensitivity is peaked of 41.395 mA/W at wavelength 257 nm and then decreases by about 3 to 4 decades at 400 nm demonstrating the ability of this photocathode for solar-blind application prospects.
Bin Ren1,2,3, Hui Guo1,3, Feng Shi1,3, Hong-Chang Cheng1,3, Hui Liu1,3, Jian Liu4, Zhi-Hui Shen5, Yan-Li Shi3, and Pei Liu6 （1 Science and Technology on Low-Light-Level Night Vision Laboratory, Xi＇an 710065, China 2Department of Physics, Beijing Institute of Technology, Beijing 100081, China 3 Kunming Institute of Physics, Kunming 650223. China 4Institute of Electron Engineering and Photoelectric Technology, Nanjing University of Science and Technology, Nanjing 210094, China 5 Chongqing Optoelectronics Research Institute, Chongqing 400060, China 6Newcastle University Business School, Newcastle, The UK）
11-5639/O4
photocathode, Ⅲ-nitride, solar-blind UV
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/8/088504