Morphology and Microstructure of InAs Nanowires on GaAs Substrates Grown by Molecular Beam Epitaxy

We successfully grow high-quality wurtzite InAs nanowires on GaAs substrates. The influences of growth tem- perature and orientations of GaAs substrates on the morphology and microstructure of InAs nanowires are also investigated. We find that a low growth temperature （330℃） is beneficial to the syn...

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Bibliographic Details
Published inChinese physics letters Vol. 31; no. 9; pp. 159 - 162
Main Author 石遂兴 卢振宇 张智 周晨 陈平平 邹进
Format Journal Article
LanguageEnglish
Published 01.09.2014
Subjects
GaAs衬底
分子束外延
形态
微观结构
生长温度
砷化铟
砷化镓
纳米线
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Summary:We successfully grow high-quality wurtzite InAs nanowires on GaAs substrates. The influences of growth tem- perature and orientations of GaAs substrates on the morphology and microstructure of InAs nanowires are also investigated. We find that a low growth temperature （330℃） is beneficial to the synthesis of uniform defect-free InAs nanowires. Meanwhile, InAs nanowires along （ 111〉 B direction are always dominated despite the variation of GaAs substrate orientations.
Bibliography:SHI Sui-Xing, LU Zhen-Yu, ZHANG Zhi, ZHOU Chen, CHEN Ping-Ping, ZOU Jin（1. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 2.Materials Engineering, University of Queensland, QLD 4072, Australia 3. Center for Microscopy and Microanalysis, University of Queensland, QLD 4072, Australia）
11-1959/O4
We successfully grow high-quality wurtzite InAs nanowires on GaAs substrates. The influences of growth tem- perature and orientations of GaAs substrates on the morphology and microstructure of InAs nanowires are also investigated. We find that a low growth temperature （330℃） is beneficial to the synthesis of uniform defect-free InAs nanowires. Meanwhile, InAs nanowires along （ 111〉 B direction are always dominated despite the variation of GaAs substrate orientations.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/31/9/098101