Growth and characterization of AlN epilayers using pulsed metal organic chemical vapor deposition

We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The sources of trimethylaluminium（TMAl） and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cyc...

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Published inChinese physics B Vol. 26; no. 7; pp. 420 - 425
Main Author 吉泽生 汪连山 赵桂娟 孟钰淋 李方政 李辉杰 杨少延 王占国
Format Journal Article
LanguageEnglish
Published 01.06.2017
Subjects
AlN
原子力显微镜
外延层
沉积特征
生长模式
脉冲
金属有机化学气相沉积
高分辨X射线衍射
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Summary:We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The sources of trimethylaluminium（TMAl） and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction（HRXRD） measurement showed that the full width at half maximum（FWHM） of the（0002） and（10-12） reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square（RMS） roughness was lower to 0.2 nm as tested by atomic force microscope（AFM）. The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress.
Bibliography:We report the growth of Al N epilayers on c-plane sapphire substrates by pulsed metal organic chemical vapor deposition（MOCVD）. The sources of trimethylaluminium（TMAl） and ammonia were pulse introduced into the reactor to avoid the occurrence of the parasitic reaction. Through adjusting the duty cycle ratio of TMAl to ammonia from 0.8 to 3.0, the growth rate of Al N epilayers could be controlled in the range of 0.24 m/h to 0.93 m/h. The high-resolution x-ray diffraction（HRXRD） measurement showed that the full width at half maximum（FWHM） of the（0002） and（10-12） reflections for a sample would be 194 arcsec and 421 arcsec, respectively. The step-flow growth mode was observed in the sample with the atomic level flat surface steps, in which a root-mean-square（RMS） roughness was lower to 0.2 nm as tested by atomic force microscope（AFM）. The growth process of Al N epilayers was discussed in terms of crystalline quality, surface morphology,and residual stress.
pulsed metal organic chemical vapor deposition; growth mode; morphology; crystalline quality
11-5639/O4
Zesheng Ji1,Lianshan Wang1,2,Guijuan Zhao1,Yulin Meng1,Fangzheng Li1,Huijie Li1,Shaoyan Yang1,Zhanguo Wang1（ 1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China ; 2 College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China）
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/7/078102