Resonantly driven exciton Rabi oscillation in single quantum dots emitting at 1300 nm

We report on the resonance fluorescence （RF） from single InAs quantum dots （QDs） emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser sca...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 26; no. 8; pp. 185 - 188
Main Author 薛永洲 陈泽升 倪海桥 牛智川 江德生 窦秀明 孙宝权
Format Journal Article
LanguageEnglish
Published 01.08.2017
Subjects
InAs量子点
Rabi振荡
共振型
发光波长
氦氖激光器
激光散射
激光激发
激子
Online AccessGet full text
ISSN1674-1056
2058-3834
DOI10.1088/1674-1056/26/8/084202

Cover

More Information
Summary:We report on the resonance fluorescence （RF） from single InAs quantum dots （QDs） emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He-Ne laser is necessary to be used as a gate laser for obtaining RE Rabi oscillation with more than one period is observed through the picosecond （ps） pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.
Bibliography:Yong-ZhouXu1,2, Ze-Sheng Chen1, Hai-Qiao Ni1, Zhi-Chuan Niu1, De-Sheng Jiang1, Xiu-Ming Dou1,2, and Bao-Quan Sun1,2（1 State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2College of Materials Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049, China）
quantum dots, resonance fluorescence, single photons, Rabi oscillation
11-5639/O4
We report on the resonance fluorescence （RF） from single InAs quantum dots （QDs） emitting at the telecom band of 1300 nm. The InAs/GaAs QDs are embedded in a planar optical microcavity and the RF is measured by an orthogonal excitation-detection geometry for deeply suppressing the residual laser scattering. An ultra-weak He-Ne laser is necessary to be used as a gate laser for obtaining RE Rabi oscillation with more than one period is observed through the picosecond （ps） pulsed laser excitation. The resonant control of exciton opens up new possibilities for realizing the on-demand single photon emission and quantum manipulation of solid-state qubits at telecom band.
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/26/8/084202