Total Ionizing Dose Response of Different Length Devices in 0.13μm Partially Depleted Silicon-on-Insulator Technology
An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devi...
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| Published in | Chinese physics letters Vol. 34; no. 8; pp. 144 - 147 |
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| Main Author | |
| Format | Journal Article |
| Language | English |
| Published |
01.07.2017
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| Subjects | |
| Online Access | Get full text |
| ISSN | 0256-307X 1741-3540 |
| DOI | 10.1088/0256-307X/34/8/088501 |
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| Abstract | An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel lengths may exhibit an enhanced reverse short channel effect after radiation. It is ascribed to that the halo or pocket implants introduced in processes results in non-uniform channel doping profiles along the device length and trapped charges in the shallow trench isolation regions. |
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| AbstractList | An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel lengths may exhibit an enhanced reverse short channel effect after radiation. It is ascribed to that the halo or pocket implants introduced in processes results in non-uniform channel doping profiles along the device length and trapped charges in the shallow trench isolation regions. |
| Author | 张梦映 胡志远 张正选 樊双 戴丽华 刘小年 宋雷 |
| AuthorAffiliation | State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050 University of Chinese Academy of Sciences, Beijing 100049 |
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| Cites_doi | 10.1109/23.736484 10.1016/S0168-9002(99)00899-2 10.1109/IEDM.2002.1175791 10.1109/TNS.1986.4334576 10.1109/TCSI.2009.2028411 10.1109/TNS.2004.839201 10.1109/16.563368 10.1109/TNS.1984.4333491 10.1109/T-ED.1981.20494 10.1109/TNS.2015.2492778 10.1109/TNS.2012.2226751 10.1016/j.microrel.2008.04.004 |
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| Notes | 11-1959/O4 An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel lengths may exhibit an enhanced reverse short channel effect after radiation. It is ascribed to that the halo or pocket implants introduced in processes results in non-uniform channel doping profiles along the device length and trapped charges in the shallow trench isolation regions. |
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| References | Orlowski M (6) 1987 11 12 13 14 Liu Z L (15) 2011; 20 1 2 3 4 5 7 8 9 Peng C (10) 2013; 30 |
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| SubjectTerms | 三维计算机辅助设计 剂量响应 器件 总剂量效应 电离 硅绝缘体 绝缘体上硅技术 通道长度 |
| Title | Total Ionizing Dose Response of Different Length Devices in 0.13μm Partially Depleted Silicon-on-Insulator Technology |
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