Total Ionizing Dose Response of Different Length Devices in 0.13μm Partially Depleted Silicon-on-Insulator Technology

An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devi...

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Bibliographic Details
Published inChinese physics letters Vol. 34; no. 8; pp. 144 - 147
Main Author 张梦映 胡志远 张正选 樊双 戴丽华 刘小年 宋雷
Format Journal Article
LanguageEnglish
Published 01.07.2017
Subjects
三维计算机辅助设计
剂量响应
器件
总剂量效应
电离
硅绝缘体
绝缘体上硅技术
通道长度
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ISSN0256-307X
1741-3540
DOI10.1088/0256-307X/34/8/088501

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Summary:An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel lengths may exhibit an enhanced reverse short channel effect after radiation. It is ascribed to that the halo or pocket implants introduced in processes results in non-uniform channel doping profiles along the device length and trapped charges in the shallow trench isolation regions.
Bibliography:11-1959/O4
An anomalous total dose effect that the long length device is more susceptible to total ionizing dose than the short one is observed with the 0.13？μm partially depleted silicon-on-insulator technology. The measured results and 3D technology computer aided design simulations demonstrate that the devices with different channel lengths may exhibit an enhanced reverse short channel effect after radiation. It is ascribed to that the halo or pocket implants introduced in processes results in non-uniform channel doping profiles along the device length and trapped charges in the shallow trench isolation regions.
ISSN:0256-307X
1741-3540
DOI:10.1088/0256-307X/34/8/088501