Thin reduced graphene oxide interlayer with a conjugated block copolymer for high performance non-volatile ferroelectric polymer memory

• Published in: Organic electronics Vol. 15; no. 11; pp. 2719 - 2727
• Main Authors: DHINESH BABU VELUSAMY, RICHARD HAHNKEE KIM, TAKAISHI, Kazuto, MUTO, Tsuyoshi, HASHIZUME, Daisuke, SOYOON LEE, UCHIYAMA, Masanobu, AOYAMA, Tetsuya, RIBIERRE, Jean-Charles, CHEOLMIN PARK
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier 01.11.2014
• Subjects: Applied sciences; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Dielectric thin films; Dielectrics, piezoelectrics, and ferroelectrics and their properties; Electronics; Exact sciences and technology; Ferroelectricity and antiferroelectricity; Integrated circuits; Integrated circuits by function (including memories and processors); Physics; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Switching phenomena; Transistors; Interfacial layer; Gate current; Performance evaluation; Interlayers; Conjugated block copolymer; Insulator; Flexible non-volatile memory; Transistor gate; Interlayer; Polarization modulation; Low voltage; Polymer ferroelectric-gate field effect transistor memory; Non volatile memory; p type semiconductor; Vinylidene fluoride polymer; Drain current; Bending; Ferroelectric switching; Copolymer; Hysteresis; Ferroelectric storage; Growth from solution; Ferroelectric thin films; High performance; Gate voltage; Dielectric materials; Ferroelectric polymer; Field effect transistor; Ferroelectric materials; Graphene; Flexible structure; Integrated circuit; Leakage current; Reduced graphene oxide; Conjugated compound; On off effect
• ISSN: 1566-1199; 1878-5530
• DOI: 10.1016/j.orgel.2014.07.035