The coupled hole-phonon system and minority-electron transport in p-GaAs

• Published in: Solid-state electronics Vol. 35; no. 8; pp. 1139 - 1149
• Main Authors: Sadra, K., Streetman, B.G.
• Format: Journal Article
• Language: English
• Published: Oxford Elsevier Ltd 1992; Elsevier Science
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Conductivity phenomena in semiconductors and insulators; Electronic transport in condensed matter; Exact sciences and technology; Low-field transport and mobility; piezoresistance; Physics; Damping; Monte Carlo method; Minority carrier; Semiconductor materials; Charge carrier mobility; Theoretical study; Dynamic properties; Inorganic compound; Gallium Arsenides; Dielectric function; Phenomenological model; Shielding effect; Charge carrier concentration; Drift velocity; Plasmon phonon interaction
• ISSN: 0038-1101; 1879-2405
• DOI: 10.1016/0038-1101(92)90015-5

We present a Monte-Carlo study of minority-electron transport in p-GaAs including dynamic screening and plasmon-phonon couping using a phenomenologically damped quasi-nonequilibrium two-band dielectric function. Calculated mode spectra contain the acoustic and optical plasmons of the two-component hole plasma, and suggest that despite the role of the acoustic plasmon, plasma oscillations do not extend to wave vectors as large as the inverse screening length. Furthermore, we find no evidence of the drag effect. For heavy dopings, calculated high-field minority-electron drift velocities are significantly larger than experimental values, indicating that further work is required to achieve a true understanding of minority-electron transport.