GaN Nano-Cones Prepared by Jet-Printed Nanospheres Arrays

Site and dimension controllable nanocone arrays have been fabricated by a combination of inkjet-printing and nanosphere lithography. Each printed array is of well-formed circular geometry with diameters of about 20 μm. The nanocones with base diameters of 500 nanometers and sharp tips are formed due...

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Bibliographic Details
Published inIEEE transactions on nanotechnology Vol. 15; no. 3; pp. 423 - 427
Main Authors Zhang, Xuhui, Choi, Hoi Wai
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2016
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Arrays
Etching
Gallium nitride
Gallium nitrides
GaN
Isotropy
jet-printing
Lithography
nano-cones
Nanospheres
Nanostructure
Nanostructures
Optical device fabrication
Optical imaging
Optical properties
Optical reflection
Strain
jet-printing
GaN
nano-cones
nanospheres
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Summary:Site and dimension controllable nanocone arrays have been fabricated by a combination of inkjet-printing and nanosphere lithography. Each printed array is of well-formed circular geometry with diameters of about 20 μm. The nanocones with base diameters of 500 nanometers and sharp tips are formed due to etch isotropy. Photoluminescence has been carried out to study the optical properties of the Gallium Nitride nanostructures. The approach is demonstrated to be effective for the enhancement of light extraction, as well as for the formation of site-controlled nanocavities.
Bibliography:ObjectType-Article-1
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ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2016.2538792