Temperature renormalization of the conduction electron g factor in silicon

The temperature dependence of the conduction electron g factor in silicon is studied theoretically and experimentally. The theory of renormalization of the electron energy in an external magnetic field due to interaction with lattice vibrations is developed. According to the results of the calculati...

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Published inSemiconductors (Woodbury, N.Y.) Vol. 47; no. 1; pp. 169 - 173
Main Authors Konakov, A. A., Burdov, V. A., Ezhevskii, A. A., Soukhorukov, A. V., Guseinov, D. V., Popkov, S. A.
Format Journal Article
LanguageEnglish
Published Dordrecht SP MAIK Nauka/Interperiodica 2013
Springer
Subjects
2012
Analysis
Electrons
Magnetic fields
Magnetic Materials
Magnetism
March 12–16
Nizhni Novgorod
Physics
Physics and Astronomy
Silicon
XVI Symposium “Nanophysics and Nanoelectronics”
Lattice Vibration
Lande Factor
Electron Spin Resonance
Conduction Electron
Electron Spin Resonance Method
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Summary:The temperature dependence of the conduction electron g factor in silicon is studied theoretically and experimentally. The theory of renormalization of the electron energy in an external magnetic field due to interaction with lattice vibrations is developed. According to the results of the calculation, in second-order perturbation theory, the temperature renormalization of the electron g factor is determined mainly by the difference between the processes of intervalley scattering that occur with spin preservation for spin-up and spin-down electrons. Experimental investigations of n -Si samples by the electron spin resonance method demonstrated the almost linear decrease in the conduction electron g factor with an increase in the temperature in a wide range from 80 to 300 K. The results of the calculation are in good agreement with the experimental data.
ISSN:1063-7826
1090-6479
DOI:10.1134/S1063782612120093