Low Resistivity Tin-Doped Copper Nanowires

• Published in: IEEE electron device letters Vol. 34; no. 4; pp. 529 - 531
• Main Authors: LIN, Ching-Yen, WANG, Chiu-Yen, HUNG, Min-Hsiu, LIU, Tzu-Ling, YEW, Tri-Rung
• Format: Journal Article
• Language: English
• Published: New York, NY IEEE 01.04.2013; Institute of Electrical and Electronics Engineers
• Subjects: Applied sciences; Chemical vapor deposition; Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Conductivity; Copper; Cross-disciplinary physics: materials science; rheology; Cu(Sn); Current density; Design. Technologies. Operation analysis. Testing; electrical resistivity; Electronics; Exact sciences and technology; Integrated circuits; interconnect; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Microelectronic fabrication (materials and surfaces technology); Nanoscale materials and structures: fabrication and characterization; nanowire; Nanowires; Physics; Quantum wires; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices; Su-doped Cu nanowires; Substrates; Tin; Cu(Sn); Powders; Electrical conductivity; Catalysts; High density; Doped materials; Tin chloride; Failures; interconnect; Interconnections; Optimization; Integrated circuits; CVD; Tin additions; Microelectronic fabrication; chemical vapor deposition; Nanowires; Copper; Current density; electrical resistivity; Low temperature; Electrical characteristic; Su-doped Cu nanowires; nanowire
• ISSN: 0741-3106; 1558-0563
• DOI: 10.1109/LED.2013.2246133

This letter presents Sn-doped Cu nanowires, Cu(Sn) NWs, synthesized by chemical vapor deposition using Cu and SnCl 2 powders as precursors at low temperature (≤ 400°C) and their electrical properties. The Sn not only plays a role as a catalyst to enhance reduction of Cu, but also as a dopant for Cu(Sn) NWs. The Sn thickness, substrate pretreatment, substrate temperature, process pressure, and precursor compositions are optimized to obtain high-density nanowires. Results show that Cu(Sn) NWs, 30 μm in length and 50-620 nm in diameter, are synthesized successfully at 350°C. The Cu(Sn) NWs exhibit low resistivity (2.84 μΩ-cm), which is the lowest value reported thus far, and a failure current density of 3.16×10 7 A/cm 2 .