Anti-binding of biexcitons in (21 1)B InAs/GaAs piezoelectric quantum dots

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Bibliographic Details
Published inPhysica. E, Low-dimensional systems & nanostructures Vol. 40; no. 6; pp. 2113 - 2115
Main Authors DIALYNAS, G. E, XENOGIANNI, C, TSINTZOS, S, TRICHAS, E, SAVVIDIS, P. G, CONSTANTINIDIS, G, RENARD, J, GAYRAL, B, HATZOPOULOS, Z, PELEKANOS, N. T
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.04.2008
Subjects
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Exact sciences and technology
Optical properties and condensed-matter spectroscopy and other interactions of matter with particles and radiation
Optical properties of low-dimensional, mesoscopic, and nanoscale materials and structures
Physics
Quantum dots
Biexcitons
Gallium arsenides
Excitons
71.35.-y; 73.21.La; 73.61.Ey
Quantum dots
Binding energy
Quantum dots; Piezoelectric effect; Exciton related effects
Photoluminescence
High field
Molecular beam epitaxy
Indium arsenides
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ISSN:1386-9477
1873-1759
DOI:10.1016/j.physe.2007.10.036