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A study of residual stress on rf reactively sputtered RuO2 thin films

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Bibliographic Details
Published inThin solid films Vol. 375; no. 1-2; pp. 29 - 32
Main Authors Meng, Li-Jian, dos Santos, M.P
Format Journal Article Conference Proceeding
LanguageEnglish
Published Lausanne Elsevier Science 31.10.2000
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Deposition by sputtering
Exact sciences and technology
Materials science
Mechanical and acoustical properties
Methods of deposition of films and coatings; film growth and epitaxy
Physical properties of thin films, nonelectronic
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Inorganic compounds
Crystal orientation
Transition element compounds
Ruthenium oxides
Oxides
Residual stresses
Crystal growth from vapors
XRD
Experimental study
Thin films
Raman scattering
Reactive sputtering
Radiofrequency sputtering
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ISSN:0040-6090
DOI:10.1016/S0040-6090(00)01174-3
  • ikona citování Cite this
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