Role of the effect of electric field redistribution in the variation of the characteristics of open metal—insulator—metal “sandwich” structures under the action of moisture

We report on the results of numerical simulation of the effect of electric field redistribution in the insulating gap of the open TiN–SiO 2 –W metal–insulator–metal “sandwich” structure upon the formation of an insulating film layer with an elevated permittivity at the free end as a result of absorp...

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Bibliographic Details
Published inTechnical physics Vol. 60; no. 9; pp. 1376 - 1383
Main Authors Mordvintsev, V. M., Levin, V. L., Kudryavtsev, S. E., Tsvetkova, L. A.
Format Journal Article
LanguageEnglish
Published Moscow Pleiades Publishing 01.09.2015
Springer
Subjects
Classical and Continuum Physics
Dielectric films
Physical Electronics
Physics
Physics and Astronomy
Silica
Thin films
Effective Permittivity
Thermal Silicon Dioxide
Relative Permittivity
Moist Layer
Field Strength
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Summary:We report on the results of numerical simulation of the effect of electric field redistribution in the insulating gap of the open TiN–SiO 2 –W metal–insulator–metal “sandwich” structure upon the formation of an insulating film layer with an elevated permittivity at the free end as a result of absorption of moisture by the porous silicon dioxide obtained by plasmachemical deposition. It is shown that the effect of electric field redistribution can explain all experimentally observed changes in the electric parameters caused by the action of moisture.
ISSN:1063-7842
1090-6525
DOI:10.1134/S1063784215090133