Mobility limited by cluster scattering in ternary alloy quantum wires

The mobility limited by cluster scattering in ternary alloy semiconductor quantum wire (QWR) is theoretically inves- tigated under Born approximation. We calculate the screened mobility due to clusters (high indium composition lnGaN) scattering in the InxGal_xN QWR structure. The characteristics of...

Full description

Saved in:
Bibliographic Details
Published inChinese physics B Vol. 23; no. 1; pp. 407 - 411
Main Author 张恒 杨少延 刘贵鹏 王建霞 金东东 李辉杰 刘祥林 朱勤生 王占国
Format Journal Article
LanguageEnglish
Published 2014
Subjects
Online AccessGet full text

Cover

Loading…
More Information
Summary:The mobility limited by cluster scattering in ternary alloy semiconductor quantum wire (QWR) is theoretically inves- tigated under Born approximation. We calculate the screened mobility due to clusters (high indium composition lnGaN) scattering in the InxGal_xN QWR structure. The characteristics of the cluster scattering mechanism are discussed in terms of the indium composition of clusters, the one-dimensional electron gas (1DEG) concentration, and the radius of QWR. We find that the density, breadth of cluster, and the correlation length have a strong effect on the electron mobility due to cluster scattering, Finally, a comparison of the cluster scattering is made with the alloy-disorder scattering. It is found that the cluster scattering acts as a significant scattering event to impact the resultant electron mobility in ternary alloy QWR.
Bibliography:11-5639/O4
Zhang Heng, Yang Shao-Yan, Liu Gui-Peng, Wang Jian-Xia, Jin Dong-Dong, Li Hui-Jie Liu Xiang-Lin(, Zhu Qin-Sheng, Wang Zhan-Guo(1Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China 2. Belting Key Laboratory of Low Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)
ISSN:1674-1056
2058-3834
DOI:10.1088/1674-1056/23/1/017305