Optical Luminescence Yield X-ray Absorption Fine Structures at the Sulphur and Silicon K-edge

• Published in: Japanese Journal of Applied Physics Vol. 32; no. S2; p. 223
• Main Authors: Sham, T. K., Feng, X.-H., Jiang, D.-T., Tan, K. H., Frigo, S. P., Rosenberg, R. A., Houghton, D. C., Bryskiewicz, B.
• Format: Journal Article
• Language: English
• Published: 01.01.1993
• ISSN: 0021-4922; 1347-4065
• DOI: 10.7567/JJAPS.32S2.223

Optical luminescence induced by soft x-ray excitation in the vicinity of the S K-edge (∼2472 eV) and Si K-edge (∼1839 eV) in P-31 (ZnS:Cu phosphor) and porous silicon has been studied with an optical spectrometer. The luminescence yield was in turn used, together with total electron yield, to record x-ray absorption fine structures in the near edge region of the corresponding S and Si K-edge. It is found that although the luminescence spectrum of soft x-ray excited P-31 above and below the S K-edge is identical, a small shift is noted in porous silicon at photon energies below and above the Si K-edge and that the luminescence yield (optical photon/soft x-ray photon absorbed) varies significantly depending on experimental conditions and/or the nature of the exciting channel.