Origins of Parasitic Emissions from 353 nm AlGaN-based Ultraviolet Light Emitting Diodes over SiC Substrates

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Bibliographic Details
Published inJapanese Journal of Applied Physics Vol. 45; no. 5R; p. 4083
Main Authors Park, Ji-Soo, Fothergill, Daryl W., Wellenius, Patrick, Bishop, Seann M., Muth, John F., Davis, Robert F.
Format Journal Article
LanguageEnglish
Published 01.05.2006
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.45.4083