1.32-μm GaInNAs-GaAs laser with a low threshold current density

• Published in: IEEE photonics technology letters Vol. 14; no. 3; pp. 275 - 277
• Main Authors: Peng, C.S., Jouhti, T., Laukkanen, P., Pavelescu, E.-M., Konttinen, J., Li, W., Pessa, M.
• Format: Journal Article
• Language: English
• Published: IEEE 01.03.2002
• Subjects: Density; Gallium arsenide; Laser modes; Lasers; Molecular beam epitaxial growth; Molecular beam epitaxy; Molecular structure; Optical transmitters; Plasma temperature; Power lasers; Ridges; Semiconductor lasers; Stimulated emission; Subcarriers; Threshold current; Threshold currents; Waveguide lasers; Wavelengths

We report on a recent development of diluted nitride laser diodes operating at the wavelengths around 1.3 μm. The lasers grown by molecular beam epitaxy and processed into 20-μm-wide ridge waveguide structures, mounted episides up on subcarriers, exhibit a threshold current density as low as 563 A/c...