1.32-μm GaInNAs-GaAs laser with a low threshold current density

We report on a recent development of diluted nitride laser diodes operating at the wavelengths around 1.3 μm. The lasers grown by molecular beam epitaxy and processed into 20-μm-wide ridge waveguide structures, mounted episides up on subcarriers, exhibit a threshold current density as low as 563 A/c...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 14; no. 3; pp. 275 - 277
Main Authors Peng, C.S., Jouhti, T., Laukkanen, P., Pavelescu, E.-M., Konttinen, J., Li, W., Pessa, M.
Format Journal Article
LanguageEnglish
Published IEEE 01.03.2002
Subjects
Density
Gallium arsenide
Laser modes
Lasers
Molecular beam epitaxial growth
Molecular beam epitaxy
Molecular structure
Optical transmitters
Plasma temperature
Power lasers
Ridges
Semiconductor lasers
Stimulated emission
Subcarriers
Threshold current
Threshold currents
Waveguide lasers
Wavelengths
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Summary:We report on a recent development of diluted nitride laser diodes operating at the wavelengths around 1.3 μm. The lasers grown by molecular beam epitaxy and processed into 20-μm-wide ridge waveguide structures, mounted episides up on subcarriers, exhibit a threshold current density as low as 563 A/cm 2 , slope efficiency of 0.2 W/A per facet, light power up to 40-mW continuous-wave, and characteristic temperature of 97-133 K.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.986784