The influence of substrate temperature on properties of Cu-Al-O films deposited using the reactive ion beam sputtering method

For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fouri...

Full description

Saved in:
Bibliographic Details
Published inSemiconductor physics, quantum electronics, and optoelectronics Vol. 20; no. 3; pp. 314 - 318
Main Author Ievtushenko, A.I.
Format Journal Article
LanguageEnglish
Published National Academy of Sciences of Ukraine. Institute of Semi conductor physics 09.10.2017
Subjects
Cu-Al-O films
FTIR
morphology
optic properties
XRD
Online AccessGet full text

Cover

More Information
Summary:For the first time, Cu-Al-O films were grown using the reactive ion beam sputtering at temperatures ranging from 80 to 380 °C in 50 °C increments. Correlations between the properties of as-grown films measured by X-ray diffraction, energy dispersive X-ray spectroscopy, atomic force microscopy, Fourier transform infrared spectrometry and optical transmission measurements have been discussed. It was shown that the increase of substrate temperature caused formation of the CuAlO2 phase. Additional optimization of technological parameters of growth and post-growth temperature annealing are necessary to obtain single-phase CuAlO2 films.
ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo20.03.314