InGaN/GaN Blue Laser Diode Grown on Semipolar $(30\bar{3}1)$ Free-Standing GaN Substrates

We demonstrate the first electrically-injected InGaN/GaN laser diodes (LDs) grown on semipolar $(30\bar{3}1)$ free-standing GaN substrates. The lowest threshold current density ($J_{\text{th}}$) was 5.6 kA/cm 2 with a clear lasing peak at 444.7 nm. The peak electroluminescence (EL) wavelength blue-s...

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Published inApplied physics express Vol. 3; no. 5; pp. 052702 - 052702-3
Main Authors Hsu, Po Shan, Kelchner, Kathryn M, Tyagi, Anurag, Farrell, Robert M, Haeger, Daniel A, Fujito, Kenji, Ohta, Hiroaki, DenBaars, Steven P, Speck, James S, Nakamura, Shuji
Format Journal Article
LanguageEnglish
Published The Japan Society of Applied Physics 01.05.2010
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Summary:We demonstrate the first electrically-injected InGaN/GaN laser diodes (LDs) grown on semipolar $(30\bar{3}1)$ free-standing GaN substrates. The lowest threshold current density ($J_{\text{th}}$) was 5.6 kA/cm 2 with a clear lasing peak at 444.7 nm. The peak electroluminescence (EL) wavelength blue-shifted 4 nm below threshold and the characteristic temperature was ${\sim}135$ K. These results suggest that the semipolar $(30\bar{3}1)$ plane may be a potential candidate for growing high performance nitride-based LDs.
Bibliography:(a) Schematic of the wurtzite GaN crystal structure showing the $(10\bar{1}0)$, $(30\bar{3}1)$, $(20\bar{2}1)$, and (0001) planes. (b) Nomarski images taken at 5$\times$ and 10$\times$ show the morphology of the $(30\bar{3}1)$ epitaxial growth surface. (a) Reciprocal space map (RSM) around the asymmetrical 205 diffraction of the $(30\bar{3}1)$ LD structure and (b) reciprocal space mesh showing the location of the 205 reflection. Pulsed $L$--$I$--$V$ characteristics for a $10\times 1800$ μm 2 LD device. The lasing spectrum above threshold is shown in the inset. (a) EL spectra as a function of injected current density. (b) Peak wavelength and FHWM dependence on current density. Peak wavelength data for a 450 nm $c$-plane LD is included for comparison. Threshold current density and lasing wavelength dependence on stage temperature.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.3.052702