InGaN/GaN Blue Laser Diode Grown on Semipolar $(30\bar{3}1)$ Free-Standing GaN Substrates
We demonstrate the first electrically-injected InGaN/GaN laser diodes (LDs) grown on semipolar $(30\bar{3}1)$ free-standing GaN substrates. The lowest threshold current density ($J_{\text{th}}$) was 5.6 kA/cm 2 with a clear lasing peak at 444.7 nm. The peak electroluminescence (EL) wavelength blue-s...
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Published in | Applied physics express Vol. 3; no. 5; pp. 052702 - 052702-3 |
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Main Authors | , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
The Japan Society of Applied Physics
01.05.2010
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Online Access | Get full text |
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Summary: | We demonstrate the first electrically-injected InGaN/GaN laser diodes (LDs) grown on semipolar $(30\bar{3}1)$ free-standing GaN substrates. The lowest threshold current density ($J_{\text{th}}$) was 5.6 kA/cm 2 with a clear lasing peak at 444.7 nm. The peak electroluminescence (EL) wavelength blue-shifted 4 nm below threshold and the characteristic temperature was ${\sim}135$ K. These results suggest that the semipolar $(30\bar{3}1)$ plane may be a potential candidate for growing high performance nitride-based LDs. |
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Bibliography: | (a) Schematic of the wurtzite GaN crystal structure showing the $(10\bar{1}0)$, $(30\bar{3}1)$, $(20\bar{2}1)$, and (0001) planes. (b) Nomarski images taken at 5$\times$ and 10$\times$ show the morphology of the $(30\bar{3}1)$ epitaxial growth surface. (a) Reciprocal space map (RSM) around the asymmetrical 205 diffraction of the $(30\bar{3}1)$ LD structure and (b) reciprocal space mesh showing the location of the 205 reflection. Pulsed $L$--$I$--$V$ characteristics for a $10\times 1800$ μm 2 LD device. The lasing spectrum above threshold is shown in the inset. (a) EL spectra as a function of injected current density. (b) Peak wavelength and FHWM dependence on current density. Peak wavelength data for a 450 nm $c$-plane LD is included for comparison. Threshold current density and lasing wavelength dependence on stage temperature. |
ISSN: | 1882-0778 1882-0786 |
DOI: | 10.1143/APEX.3.052702 |