An InAlAs-InGaAs OPFET with responsivity above 200 A/W at 1.3-μm wavelength

The optoelectronic dc and RF behaviour of an InAlAs-InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3-μm wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-μm g...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 11; no. 1; pp. 117 - 119
Main Authors Marso, M., Gersdorf, P., Fox, A., Forster, A., Hodel, U., Lambertini, R., Kordos, P.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1999
Subjects
Devices
Electron optics
FETs
Gates
HEMTs
High electron mobility transistors
Indium gallium arsenide
Indium gallium arsenides
Lighting control
MODFETs
Optical control
Optoelectronics
Photoconducting materials
Photodetectors
Radio frequency
Semiconductor devices
Transistors
Wavelengths
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Summary:The optoelectronic dc and RF behaviour of an InAlAs-InGaAs optically controlled field-effect transistor based on a high electron mobility transistor layer structure is investigated at 1.3-μm wavelength light. The device is backside-illuminated to increase the responsivity. A transistor with 0.3-μm gate length and an active area of 50×50 μm 2 exhibits a responsivity of 235 A/W, at 11-μW incident optical power. The photoconductive response is higher than for an metal-semiconductor-metal photodetector with the same InGaAs absorption layer thickness up to 10 GHz.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.736414