Depositions of SrRuO3 thin films on oxide substrates with liquid-delivery spin MOCVD

Systematic variations of the deposition conditions for thin epitaxial SrRuO3 films with a liquid-delivery spin MOCVD were performed in order to get a detailed understanding of the physical and chemical issues in the growth process. We have observed that at very low as well as at high growth rates th...

Full description

Saved in:
Bibliographic Details
Published inThin solid films Vol. 518; no. 16; pp. 4675 - 4679
Main Authors Schwarzkopf, J., Dirsyte, R., Devi, A., Schmidbauer, M., Wagner, G., Fornari, R.
Format Journal Article
LanguageEnglish
Published 01.06.2010
Subjects
Carbon
Compressive properties
Deposition
Electrical resistivity
Epitaxial growth
Lattice strain
Oxides
Strain
Thin films
Online AccessGet full text

Cover

More Information
Summary:Systematic variations of the deposition conditions for thin epitaxial SrRuO3 films with a liquid-delivery spin MOCVD were performed in order to get a detailed understanding of the physical and chemical issues in the growth process. We have observed that at very low as well as at high growth rates the structural ordering of the films and the lattice strain is low, while for optimized conditions (a arrow right 40.14-0.2nm/min) films can be grown under high compressive strain on SrTiO3 and under tensile strain on DyScO3, showing an electrical resistivity of a arrow right 4250I14I[copycm. Films on NdGaO3 are nearly totally plastically relaxed. In contrast to PLD, step-flow growth could not be detected due to significantly higher carbon incorporation.
Bibliography:ObjectType-Article-1
SourceType-Scholarly Journals-1
ObjectType-Feature-2
content type line 23
ISSN:0040-6090
DOI:10.1016/j.tsf.2009.12.057