Effective polycrystalline sensor of ultraviolet radiation

Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrys...

Full description

Saved in:
Bibliographic Details
Published inSemiconductor physics, quantum electronics, and optoelectronics Vol. 20; no. 3; pp. 335 - 339
Main Author Pavelets, S. Yu
Format Journal Article
LanguageEnglish
Published National Academy of Sciences of Ukraine. Institute of Semi conductor physics 09.10.2017
Subjects
cadmium sulfide
copper chalcogenide
energy band offset diagram
polycrystalline UV sensor
surface-barrier structure
Online AccessGet full text

Cover

More Information
Summary:Deposition of special thin layers with high and low resistance in space charge region of surface barrier photoconverters based on the p-Cu1.8S/n-CdS structure leads to a sufficient increase in photosensitivity and decrease in dark tunneling-recombination current. Highly efficient and stable polycrystalline photoconverters of ultraviolet radiation based on polycrystalline CdS have been obtained. Electrical and photoelectric properties have been investigated, and the main operational parameters of ultraviolet sensors have been adduced. The reasons for high stability of the parameters inherent to the p-Cu1.8S/n-CdS sensors are as follows: the absence of impurity components additionally doped to the barrier structure and stability of the photocurrent photoemission component.
ISSN:1560-8034
1605-6582
DOI:10.15407/spqeo20.03.335