Bi12SiO20 single crystal growth by the Bridgman method

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Bibliographic Details
Published inJournal of crystal growth Vol. 133; no. 3-4; pp. 267 - 272
Main Authors Xuewu, Xu, Jingying, Liao, Bingfu, Shen, Peifa, Shao, Xianqiu, Chen, Chongfan, He
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.10.1993
Subjects
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Growth from melts; zone melting and refining
Materials science
Methods of crystal growth; physics of crystal growth
Physics
Theory and models of crystal growth; physics of crystal growth, crystal morphology and orientation
Theory and models of film growth
Crystal growth
Inorganic compounds
Crystal orientation
Ternary compounds
Facetting
Growth interface
Bismuth oxides
Experimental study
Growth defect
Monocrystals
Silicon oxides
Optical materials
Bridgman method
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More Information
ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(93)90164-R