Composition changes in GaxIn1-xAs/InP superlattice growth by chemical beam epitaxy

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Bibliographic Details
Published inJournal of crystal growth Vol. 136; no. 1-4; pp. 302 - 305
Main Authors YOKOUCHI, N, INABA, Y, UCHIDA, T, MIYAMOTO, T, MORI, K, KOYAMA, F, IGA, K
Format Conference Proceeding Journal Article
LanguageEnglish
Published Amsterdam Elsevier 01.03.1994
Subjects
Condensed matter: structure, mechanical and thermal properties
Cross-disciplinary physics: materials science; rheology
Exact sciences and technology
Low-dimensional structures (superlattices, quantum well structures, multilayers): structure, and nonelectronic properties
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Molecular, atomic, ion, and chemical beam epitaxy
Physics
Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties)
Crystal growth
Gallium arsenides
Inorganic compounds
Semiconductor materials
Ternary compounds
Epitaxy
Binary compounds
XRD
Experimental study
Indium arsenides
Thin films
Multilayers
Ultrathin layer
Solid solutions
Indium phosphides
Superlattices
Chemical beam condensation
Chemical composition
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ISSN:0022-0248
1873-5002
DOI:10.1016/0022-0248(94)90429-4