Towards low-temperature deposition of piezoelectric Pb(Zr,Ti)O3: Influence of pressure and temperature on the properties of pulsed laser deposited Pb(Zr,Ti)O3

Control of the structural and electrical properties of piezoelectric lead zirconate titanate (Pb(Zrx,Ti1−x)O3 - PZT) thin films is a prerequisite for successful implementation of PZT in sensor and actuator devices in micro-electro-mechanical systems (MEMS). In this work, 900 nm thick PZT thin films...

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Bibliographic Details
Published inThin solid films Vol. 636; pp. 680 - 687
Main Authors Schatz, A., Pantel, D., Hanemann, T.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 31.08.2017
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Summary:Control of the structural and electrical properties of piezoelectric lead zirconate titanate (Pb(Zrx,Ti1−x)O3 - PZT) thin films is a prerequisite for successful implementation of PZT in sensor and actuator devices in micro-electro-mechanical systems (MEMS). In this work, 900 nm thick PZT thin films are grown on platinized silicon wafers by pulsed laser deposition. The influence of deposition pressure and temperature on structural properties as well as on dielectric and piezoelectric properties is investigated. It is observed that PZT thin films which possess a columnar microstructure with smooth grain boundaries, e.g. deposited at low temperature and low pressure or at high temperature and high pressure, also have high lead content. These PZT thin films exhibit higher dielectric permittivity ϵr and transverse piezoelectric coefficient e31,f than films with coarse grain boundaries. We show that an e31,f of (−12.5 ± 0.7)C/m2 can be obtained for PZT deposition temperatures as low as 445 °C which can be sufficient for deposition of PZT thin films on complementary metal-oxide-semiconductor (CMOS) wafers for MEMS actuator applications. These results provide a better understanding of the growth of PZT via pulsed laser deposition and a route to low temperature, i.e. post-CMOS, deposition of piezoelectric PZT thin films. •PZT with a piezoelectric coefficient of −12.5C/m2 was deposited at 445°C by PLD.•PLD deposition temperature and pressure have significant effect on PZT properties.•Permittivity and piezoelectric coefficient are linked to the microstructure.
ISSN:0040-6090
1879-2731
DOI:10.1016/j.tsf.2017.06.045