Stochastic resonance among single-electron neurons on Schottky wrap-gate device

• Published in: International Congress series Vol. 1291; pp. 213 - 216
• Main Authors: Oya, Takahide, Asai, Tetsuya, Kagaya, Ryo, Kasai, Seiya, Amemiya, Yoshihito
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.06.2006
• Subjects: Schottky wrap-gate device; Single-electron circuit; Spiking neural network; Stochastic resonance; Single-electron circuit; Stochastic resonance; Spiking neural network; Schottky wrap-gate device
• ISSN: 0531-5131; 1873-6157
• DOI: 10.1016/j.ics.2006.01.085

Neuromorphic computing based on single-electron circuit technology has become widely noticed because of the recent claim about its massively increased computational efficiency and its increasing relevance between computer technology and nanotechnology. Its impact will be strongly felt when single-electron circuits based on a fault- and noise-tolerant neural structure are able to operate in a room-temperature environment. To fabricate such robust single-electron devices, we investigated stochastic resonance in an ensemble of single-electron boxes. We here employ a single-electron transistor on a Schottky wrap-gate device, instead of a single-electron box, as a neuron, and examine statistical results of the network by numerical simulation.