High-speed and low-dark-current flip-chip InAlAs/InAlGaAs quaternary well superlattice APDs with 120 GHz gain-bandwidth product

High-speed flip-chip InAlAs/InAlGaAs quaternary well superlattice avalanche photodiodes grown by gas-source molecular beam epitaxy have been achieved with 120-GHz gain-bandwidth product. These photodiodes exhibit a maximum bandwidth of 15 GHz, 0.34- mu A dark current at a multiplication factor of 20...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 5; no. 6; pp. 675 - 677
Main Authors Watanabe, I., Sugou, S., Ishikawa, H., Anan, T., Makita, K., Tsuji, M., Taguchi, K.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1993
Subjects
Avalanche photodiodes
Bandwidth
Dark current
Indium compounds
Indium phosphide
Molecular beam epitaxial growth
Optical buffering
Optical receivers
Photoconductivity
Superlattices
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Summary:High-speed flip-chip InAlAs/InAlGaAs quaternary well superlattice avalanche photodiodes grown by gas-source molecular beam epitaxy have been achieved with 120-GHz gain-bandwidth product. These photodiodes exhibit a maximum bandwidth of 15 GHz, 0.34- mu A dark current at a multiplication factor of 20, a capacitance of 0.17 pF, 65% quantum efficiency, and a low breakdown voltage of about 20 V. A clear eye opening at a multiplication factor of 20 was obtained for 10-Gbs nonreturn to zero signals. This indicates that these devices have potential for high-speed, high-sensitivity and low-power-consumption, long-wavelength optical receivers.< >
Bibliography:ObjectType-Article-2
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ISSN:1041-1135
1941-0174
DOI:10.1109/68.219707