Charge storage characteristics of iridium silicide nanocrystals embedded in SiO2 matrix for nonvolatile memory application

In this work, the nanostructure-assisted "Al/SiO2/Ir-silicide-NCs/SiO2/P-Si-sub/Ala&#1 28; stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO2 layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory wind...

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Bibliographic Details
Published inThin solid films Vol. 518; no. 24; pp. 7287 - 7290
Main Authors Wang, Terry Tai-Jui, Hung, Shih Wei, Chuang, Pi Kai, Kuo, Cheng Tzu
Format Journal Article
LanguageEnglish
Published 01.10.2010
Subjects
Density
Intermetallics
Iridium
Nanocrystals
Nanostructure
Silicides
Silicon dioxide
Stacks
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Summary:In this work, the nanostructure-assisted "Al/SiO2/Ir-silicide-NCs/SiO2/P-Si-sub/Ala&#1 28; stack with iridium silicide nanocrystals (Ir-silicide-NCs) embedded between two SiO2 layers has been demonstrated in the application of nonvolatile memory for the first time. A significant memory window voltage of 14.2V at sweeps of +/a degree 10V by capacitance-voltage measurement can be reached, when well-distributed Ir-silicide-NCs are observed in cross-sectional TEM examination. In this case, the trap density is estimated to be about 1.06A-1013 cma degree 2, indicating a high trapping efficiency stack for nonvolatile memory application.
Bibliography:ObjectType-Article-2
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content type line 23
ISSN:0040-6090
DOI:10.1016/j.tsf.2010.04.092