Stresses in thin film metallization

Stresses in conductors used in microelectronic interconnections are a critical processing and reliability issue. This work examines: 1) the temperature-dependent stress behavior of sputtered and electroplated silver and gold films on silicon substrates; 2) the use of wafer curvature using multiple s...

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Published inIEEE transactions on components, packaging, and manufacturing technology. Part A Vol. 20; no. 2; pp. 241 - 250
Main Authors Hodge, T.C., Bidstrup-Allen, S.A., Kohl, P.A.
Format Journal Article
LanguageEnglish
Published IEEE 01.06.1997
Subjects
Conductors
Gold
Metallization
Microelectronics
Semiconductor films
Silver
Sputtering
Substrates
Thermal stresses
Transistors
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Summary:Stresses in conductors used in microelectronic interconnections are a critical processing and reliability issue. This work examines: 1) the temperature-dependent stress behavior of sputtered and electroplated silver and gold films on silicon substrates; 2) the use of wafer curvature using multiple substrates for the simultaneous determination of coefficient of thermal expansion (CTE) and modulus for thin films. The stress-temperature behavior of gold films on gallium arsenide and aluminum substrates was measured to determine its CTE and modulus. It is shown that electroplated noble metal films have lower stresses than sputtered films, due to larger grain sizes.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1070-9886
1558-3678
DOI:10.1109/95.588580