Spatial temperature profiles due to nonuniform self-heating in LDMOS's in thin SOI

Temperature profiles resulting from self-heating in SOI-LDMOS devices with uniformly doped and linearly graded drift regions were measured using a resistance thermometry technique. Two-dimensional electrothermal device simulations were performed and the results agreed with the experiments. Because o...

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Bibliographic Details
Published inIEEE electron device letters Vol. 18; no. 1; pp. 13 - 15
Main Authors Ying-Keung Leung, Kuehne, S.C., Huang, V.S.K., Nguyen, C.T., Paul, A.K., Plummer, J.D., Wong, S.S.
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1997
Subjects
Dielectrics and electrical insulation
Electrical resistance measurement
Electrothermal effects
Logic devices
Power dissipation
Silicon on insulator technology
Substrates
Temperature distribution
Thermal resistance
Thermistors
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Summary:Temperature profiles resulting from self-heating in SOI-LDMOS devices with uniformly doped and linearly graded drift regions were measured using a resistance thermometry technique. Two-dimensional electrothermal device simulations were performed and the results agreed with the experiments. Because of the different power dissipation profiles, RESURF devices with a uniformly doped drift region assume a fairly uniform temperature distribution while devices with a linearly graded drift region have a much higher temperature rise near the source than the drain. This local hot spot near the source raises reliability issues in device design.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0741-3106
1558-0563
DOI:10.1109/55.553061