Low-threshold loss-coupled laser diode by new grating fabrication technique

We introduce a novel fabrication method to make InGaAs absorptive first-order grating for loss-coupled distributed feedback laser diode (DFB-LD) using reactive ion etching. By this technique, it is possible to control duty rate of the first-order grating. A very-low-threshold current of 6 mA was obt...

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Bibliographic Details
Published inIEEE photonics technology letters Vol. 9; no. 1; pp. 22 - 24
Main Authors Park, Chongdae, Kim, Jeong Soo, Oh, Dae Kon, Jang, Dong Hoon, Park, Chan Yong, Ahn, Joo Heon, Kim, Hyoung Moon, Choo, Heung Ro, Kim, Hongman, Pyun, Kwang Eui
Format Journal Article
LanguageEnglish
Published IEEE 01.01.1997
Subjects
Absorption
Chirp
Diode lasers
Etching
Gratings
Indium gallium arsenide
Laser feedback
Optical coupling
Optical device fabrication
Silicon compounds
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Summary:We introduce a novel fabrication method to make InGaAs absorptive first-order grating for loss-coupled distributed feedback laser diode (DFB-LD) using reactive ion etching. By this technique, it is possible to control duty rate of the first-order grating. A very-low-threshold current of 6 mA was obtained from our loss-coupled LD at the wavelength of 1.547 μm, which was unusually high for a loss-coupled LD because of the excessive light absorption. In addition to the low-threshold current, it shows high SMSR and longitudinal single-mode yield as high as 50 dB and 90%, respectively.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:1041-1135
1941-0174
DOI:10.1109/68.554158