Memory characteristics of Al2O3/La2O3/Al2O3 multi-layer films with various blocking and tunnel oxide thicknesses

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Bibliographic Details
Published inMaterials science in semiconductor processing Vol. 13; no. 1; pp. 9 - 12
Main Authors Kim, Hyo June, Cha, Seung Yong, Choi, Doo Jin
Format Journal Article
LanguageEnglish
Published Kidlington Elsevier 01.02.2010
Subjects
Applied sciences
Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.)
Compound structure devices
Cross-disciplinary physics: materials science; rheology
Electronics
Exact sciences and technology
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Materials science
Methods of deposition of films and coatings; film growth and epitaxy
Physics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Storage and reproduction of information
Aluminium oxide
Voltage threshold
SONOS
Memory devices
Tunnel effect
Multiple layer
Erasure
Trap
SONOS structure
MOCVD
Optimization
Sense amplifier
Lanthanum oxide
O
Thickness
Microelectronic fabrication
III-VI compound
Flash memory
Non volatile memory
La
Integrated circuit
High k dielectric
Flash
High-k dielectrics
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ISSN:1369-8001
1873-4081
DOI:10.1016/j.mssp.2010.01.002