Analysis of floating body induced transient behaviors in partially depleted thin film SOI devices

Emphasis toward manufacturability of thin film SOI devices has prompted more attention on partially depleted devices. In this paper, drain current transients in partially depleted SOI devices due to floating-body effects are investigated quantitatively. A one-dimensional analytical model is develope...

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Bibliographic Details
Published inIEEE transactions on electron devices Vol. 43; no. 2; pp. 318 - 325
Main Authors Shin, H.C., Ik-Sung Lim, Racanelli, M., Wen-Ling Margaret Huang, Foerstner, J., Bor-Yuan Hwang
Format Journal Article
LanguageEnglish
Published IEEE 01.02.1996
Subjects
Analytical models
CMOS process
CMOS technology
Immune system
Silicon on insulator technology
Substrates
Thin film devices
Time measurement
Transient analysis
Voltage
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Summary:Emphasis toward manufacturability of thin film SOI devices has prompted more attention on partially depleted devices. In this paper, drain current transients in partially depleted SOI devices due to floating-body effects are investigated quantitatively. A one-dimensional analytical model is developed to predict the transient effect and MEDICI simulation is performed to confirm the model. With the model, the amount of the turn-on current enhancement and the turn-off current suppression are calculated. The transient characteristics can be used in investigating the quality of the SOI materials by determining the carrier lifetime. The impact of the transient effect on the device parameter extraction is described.
Bibliography:ObjectType-Article-2
SourceType-Scholarly Journals-1
ObjectType-Feature-1
content type line 23
ISSN:0018-9383
1557-9646
DOI:10.1109/16.481734